BSV23M Specs and Replacement
Type Designator: BSV23M
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: SOT89
BSV23M Substitution
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BSV23M datasheet
BSV 236SP OptiMOS -P Small-Signal-Transistor Product Summary Feature VDS -20 V P-Channel RDS(on) 175 m Enhancement mode ID -1.5 A Super Logic Level (2.5 V rated) PG-SOT-363 150 C operating temperature 4 Avalanche rated 5 6 dv/dt rated 3 2 1 VPS05604 Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 ... See More ⇒
BSV 236SP OptiMOS -P Small-Signal-Transistor Product Summary Feature VDS -20 V P-Channel RDS(on) 175 m Enhancement mode ID -1.5 A Super Logic Level (2.5 V rated) PG-SOT-363 150 C operating temperature 4 Avalanche rated 5 6 dv/dt rated 3 2 1 VPS05604 Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 ... See More ⇒
Detailed specifications: BSV17-10, BSV17-16, BSV17-6, BSV19, BSV21, BSV23, BSV23K, BSV23L, 2SC5198, BSV24, BSV24K, BSV24L, BSV24M, BSV25, BSV25K, BSV25L, BSV25M
Keywords - BSV23M pdf specs
BSV23M cross reference
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