All Transistors. 2N3177 Datasheet

 

2N3177 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N3177
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 85 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO61

 2N3177 Transistor Equivalent Substitute - Cross-Reference Search

   

2N3177 Datasheet (PDF)

 9.1. Size:12K  semelab
2n3174.pdf

2N3177

2N3174Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 3A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

 9.2. Size:196K  inchange semiconductor
2n3171h.pdf

2N3177
2N3177

isc Silicon PNP Power Transistor 2N3171HDESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= -0.75V(Max)@ I = -1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSBe processed in accordance with the requirements of BS,CECC,and JAN,JANTX and JANTXV and JAN specifications.ABSOLUTE MAXIM

 9.3. Size:173K  inchange semiconductor
2n3173.pdf

2N3177
2N3177

isc Silicon PNP Power Transistor 2N3173DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= -0.75V(Max)@ I = -1ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAll semelab hermetically sealed products,can be processedin accordance with the requirements of BS,C

 9.4. Size:173K  inchange semiconductor
2n3172.pdf

2N3177
2N3177

isc Silicon PNP Power Transistor 2N3172DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= -0.75V(Max)@ I = -1ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAll semelab hermetically sealed products,can be processedin accordance with the requirements of BS,C

 9.5. Size:173K  inchange semiconductor
2n3174.pdf

2N3177
2N3177

isc Silicon PNP Power Transistor 2N3174DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= -0.75V(Max)@ I = -1ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAll semelab hermetically sealed products,can be processedin accordance with the requirements of BS,C

 9.6. Size:204K  inchange semiconductor
2n3171.pdf

2N3177
2N3177

isc Silicon PNP Power Transistor 2N3171DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= -0.75V(Max)@ I = -1ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAll semelab hermetically sealed products,can be processedin accordance with the requirements of BS,C

Datasheet: 2N317 , 2N3170 , 2N3171 , 2N3172 , 2N3173 , 2N3174 , 2N3175 , 2N3176 , 13007 , 2N3178 , 2N3179 , 2N317A , 2N3180 , 2N3181 , 2N3182 , 2N3183 , 2N3184 .

 

 
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