BSV64 Datasheet, Equivalent, Cross Reference Search
Type Designator: BSV64
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.87 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO5
BSV64 Transistor Equivalent Substitute - Cross-Reference Search
BSV64 Datasheet (PDF)
bsv64 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D110BSV64NPN medium power transistor1997 Sep 04Product specificationSupersedes data of 1997 Apr 21File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium power transistor BSV64FEATURES PINNING High current (max. 2 A)PIN DESCRIPTION Low voltage (max. 60 V)1 emitter Good high curren
bsv64smd.pdf
BSV64SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0.
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
