BSW66A Datasheet, Equivalent, Cross Reference Search
Type Designator: BSW66A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 65 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO39
BSW66A Transistor Equivalent Substitute - Cross-Reference Search
BSW66A Datasheet (PDF)
bsw66 bsw67 bsw68 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D111BSW66A; BSW67A; BSW68ANPN switching transistors1997 May 05Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistors BSW66A; BSW67A; BSW68AFEATURES PINNING High current (max. 1 A)PIN DESCRIPTION High voltage (max. 150
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: KSA642G | KRC883T | 2SD729H | MRF650
History: KSA642G | KRC883T | 2SD729H | MRF650
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