All Transistors. BSW67A Datasheet

 

BSW67A Datasheet and Replacement


   Type Designator: BSW67A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.7 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 65 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO39
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BSW67A Datasheet (PDF)

 9.1. Size:53K  philips
 bsw66 bsw67 bsw68 cnv 2.pdf pdf_icon

BSW67A

DISCRETE SEMICONDUCTORSDATA SHEETM3D111BSW66A; BSW67A; BSW68ANPN switching transistors1997 May 05Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistors BSW66A; BSW67A; BSW68AFEATURES PINNING High current (max. 1 A)PIN DESCRIPTION High voltage (max. 150

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History: ESM2060 | DMA56406 | DTA123EET1G | 3DD4617H | MP602 | MMBT1116 | 2N6177

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