BSW67A Datasheet, Equivalent, Cross Reference Search
Type Designator: BSW67A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 65 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO39
BSW67A Transistor Equivalent Substitute - Cross-Reference Search
BSW67A Datasheet (PDF)
9.1. Size:53K philips
bsw66 bsw67 bsw68 cnv 2.pdf
bsw66 bsw67 bsw68 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D111BSW66A; BSW67A; BSW68ANPN switching transistors1997 May 05Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistors BSW66A; BSW67A; BSW68AFEATURES PINNING High current (max. 1 A)PIN DESCRIPTION High voltage (max. 150
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
