BSX45-10 Datasheet, Equivalent, Cross Reference Search
Type Designator: BSX45-10
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 63
Noise Figure, dB: -
Package: TO39
BSX45-10 Transistor Equivalent Substitute - Cross-Reference Search
BSX45-10 Datasheet (PDF)
bsx45 bsx46 bsx47.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D111BSX45; BSX46; BSX47NPN medium power transistors1997 Apr 23Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium power transistors BSX45; BSX46; BSX47FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V)
bsx45 bsx46 bsx47.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTORS BSX45 BSX46BSX47TO-39Metal Can PackageAMPLIFIER TRANSISTORSABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL BSX45 BSX46 BSX47 UNITSVCEOCollector Emitter Voltage 40 60 80 VVCESCollector Emitter Voltage 80 100 120 VVEBO
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
