BSX51B Datasheet and Replacement

   Type Designator: BSX51B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 75
   Noise Figure, dB: -
   Package: TO18
     - BJT ⓘ Cross-Reference Search