2N3196 Datasheet. Specs and Replacement
Type Designator: 2N3196 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
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2N3196 datasheet
isc Silicon PNP Power Transistor 2N3196 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒
isc Silicon PNP Power Transistor 2N3198 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒
isc Silicon PNP Power Transistor 2N3195 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒
Detailed specifications: 2N3189, 2N319, 2N3190, 2N3191, 2N3192, 2N3193, 2N3194, 2N3195, 2SA1943, 2N3197, 2N3198, 2N3199, 2N32, 2N320, 2N3200, 2N3201, 2N3202
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