2N3196
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N3196
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 75
W
Maximum Collector-Base Voltage |Vcb|: 60
V
Maximum Collector-Emitter Voltage |Vce|: 60
V
Maximum Collector Current |Ic max|: 5
A
Max. Operating Junction Temperature (Tj): 200
°C
Transition Frequency (ft): 1
MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package:
TO3
2N3196
Transistor Equivalent Substitute - Cross-Reference Search
2N3196
Datasheet (PDF)
..1. Size:171K inchange semiconductor
2n3196.pdf
isc Silicon PNP Power Transistor 2N3196DESCRIPTIONExcellent Safe Operating AreaWith TO-3 packageLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor medium-speed switching and amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
9.2. Size:171K inchange semiconductor
2n3198.pdf
isc Silicon PNP Power Transistor 2N3198DESCRIPTIONExcellent Safe Operating AreaWith TO-3 packageLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor medium-speed switching and amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
9.3. Size:171K inchange semiconductor
2n3195.pdf
isc Silicon PNP Power Transistor 2N3195DESCRIPTIONExcellent Safe Operating AreaWith TO-3 packageLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor medium-speed switching and amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
Datasheet: 2N3189
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.