BSX63 Datasheet, Equivalent, Cross Reference Search
Type Designator: BSX63
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 70 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO39
BSX63 Transistor Equivalent Substitute - Cross-Reference Search
BSX63 Datasheet (PDF)
bsx62 bsx63.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D111BSX62; BSX63NPN switching transistors1997 Jun 19Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistors BSX62; BSX63FEATURES PINNING High current (max. 3 A)PIN DESCRIPTION Low voltage (max. 60 V).1 emitter2 base
bsx62 bsx63.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR BSX62, BSX63 TO-39 Metal Can PackageNPN SILICON PLANAR TRANSISTORS IN TO-39 PACKAGE.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL BSX62 BSX63 UNITSVCEOCollector Emitter Voltage 40 60 VVCESCollector Emitter Voltage 60 80 V
bsx63smd.pdf
BSX63SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 3A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0.
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
