BSX63D Datasheet. Specs and Replacement
Type Designator: BSX63D 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 70 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO39
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BSX63D datasheet
DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSX62; BSX63 NPN switching transistors 1997 Jun 19 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors BSX62; BSX63 FEATURES PINNING High current (max. 3 A) PIN DESCRIPTION Low voltage (max. 60 V). 1 emitter 2 base... See More ⇒
BSX63SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 60V IC = 3A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0.... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR BSX62, BSX63 TO-39 Metal Can Package NPN SILICON PLANAR TRANSISTORS IN TO-39 PACKAGE. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL BSX62 BSX63 UNITS VCEO Collector Emitter Voltage 40 60 V VCES Collector Emitter Voltage 60 80 V... See More ⇒
Detailed specifications: BSX62D, BSX62SM, BSX63, BSX63-10, BSX63-16, BSX63-6, BSX63B, BSX63C, BC558, BSX64, BSX64-10, BSX64-6, BSX64C, BSX64SM, BSX66, BSX67, BSX68
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