All Transistors. 2N3201 Equivalents Search

 

2N3201 Specs and Replacement


   Type Designator: 2N3201
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO59
 

 2N3201 Substitution

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2N3201 detailed specifications

 9.1. Size:327K  general electric
 2n319 2n320 2n321.pdf pdf_icon

2N3201

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 9.2. Size:113K  st
 2n2894 2n3209.pdf pdf_icon

2N3201

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 9.3. Size:11K  semelab
 2n3202.pdf pdf_icon

2N3201

2N3202 Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 40V dia. IC = 3A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 ... See More ⇒

 9.4. Size:24K  semelab
 2n3209x.pdf pdf_icon

2N3201

2N3209X MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) 5.84 (0.230) SWITCHING 5.31 (0.209) TRANSISTOR 4.95 (0.195) 4.52 (0.178) FOR HIGH RELIABILITY APPLICATIONS FEATURES SILICON PLANAR EPITAXIAL PNP TRANSISTOR SCREENING OPTIONS AVAILABLE 0.48 (0.019) SPACE QUALITY LEVEL OPTIONS 0.41 (0.016) HIGH SPEED SATURATED SWITCHING dia. APPLI... See More ⇒

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Detailed specifications: 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 , S8550 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 .

Keywords - 2N3201 transistor specs

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 2N3201 equivalent finder
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