All Transistors. 2N3203 Datasheet

 

2N3203 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N3203

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 8.7 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO5

2N3203 Transistor Equivalent Substitute - Cross-Reference Search

 

2N3203 Datasheet (PDF)

9.1. 2n319 2n320 2n321.pdf Size:327K _general_electric

2N3203

9.2. 2n2894 2n3209.pdf Size:113K _st

2N3203
2N3203

 9.3. 2n3202.pdf Size:11K _semelab

2N3203

2N3202Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 40V dia.IC = 3A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

9.4. 2n3209xcsm.pdf Size:25K _semelab

2N3203
2N3203

2N3209XCSM MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) SWITCHING TRANSISTOR FOR HIGH RELIABILITY 0.51 0.10(0.02 0.004) 0.31rad.(0.012)APPLICATIONS 32 1FEATURES SILICON PLANAR EPITAXIAL PNP 1.91 0.10 (0.075 0.004)ATRANSISTOR 0.31rad.(0.012)3.05 0.13 HERMETIC CERAMIC SURFACE MOUNT (0.12 0.005)1.40(0.055)PA

 9.5. 2n3209x.pdf Size:24K _semelab

2N3203
2N3203

2N3209X MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) 5.84 (0.230) SWITCHING 5.31 (0.209)TRANSISTOR 4.95 (0.195)4.52 (0.178)FOR HIGH RELIABILITY APPLICATIONS FEATURES SILICON PLANAR EPITAXIAL PNP TRANSISTOR SCREENING OPTIONS AVAILABLE 0.48 (0.019) SPACE QUALITY LEVEL OPTIONS 0.41 (0.016) HIGH SPEED SATURATED SWITCHING dia. APPLI

Datasheet: 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 , 2N3201 , 2N3202 , BC109 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 , 2N3209AQF , 2N3209CSM .

 

 
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