2N3209L Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N3209L
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO18
2N3209L Transistor Equivalent Substitute - Cross-Reference Search
2N3209L Datasheet (PDF)
8.1. 2n2894 2n3209.pdf 
Size:113K _st
8.2. 2n3209xcsm.pdf Size:25K _semelab
2N3209XCSM MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) SWITCHING TRANSISTOR FOR HIGH RELIABILITY 0.51 0.10(0.02 0.004) 0.31rad.(0.012)APPLICATIONS 32 1FEATURES SILICON PLANAR EPITAXIAL PNP 1.91 0.10 (0.075 0.004)ATRANSISTOR 0.31rad.(0.012)3.05 0.13 HERMETIC CERAMIC SURFACE MOUNT (0.12 0.005)1.40(0.055)PA
8.3. 2n3209x.pdf Size:24K _semelab
2N3209X MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) 5.84 (0.230) SWITCHING 5.31 (0.209)TRANSISTOR 4.95 (0.195)4.52 (0.178)FOR HIGH RELIABILITY APPLICATIONS FEATURES SILICON PLANAR EPITAXIAL PNP TRANSISTOR SCREENING OPTIONS AVAILABLE 0.48 (0.019) SPACE QUALITY LEVEL OPTIONS 0.41 (0.016) HIGH SPEED SATURATED SWITCHING dia. APPLI
Datasheet: 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , S8550 , 2N321 , 2N3210 , 2N3211 , 2N3212 , 2N3213 , 2N3214 , 2N3215 , 2N3216 .
