All Transistors. 2N3209L Datasheet

 

2N3209L Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N3209L

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.36 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 400 MHz

Collector Capacitance (Cc): 5 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO18

2N3209L Transistor Equivalent Substitute - Cross-Reference Search

 

2N3209L Datasheet (PDF)

4.1. 2n3209xcsm.pdf Size:25K _upd

2N3209L
2N3209L

2N3209XCSM MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) SWITCHING TRANSISTOR FOR HIGH RELIABILITY 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) APPLICATIONS 3 2 1 FEATURES • SILICON PLANAR EPITAXIAL PNP 1.91 ± 0.10 (0.075 ± 0.004) A TRANSISTOR 0.31 rad. (0.012) 3.05 ± 0.13 • HERMETIC CERAMIC SURFACE MOUNT (0.12 ± 0.005) 1.40 (0.055) PA

4.2. 2n3209x.pdf Size:24K _upd

2N3209L
2N3209L

2N3209X MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) 5.84 (0.230) SWITCHING 5.31 (0.209) TRANSISTOR 4.95 (0.195) 4.52 (0.178) FOR HIGH RELIABILITY APPLICATIONS FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR • SCREENING OPTIONS AVAILABLE 0.48 (0.019) • SPACE QUALITY LEVEL OPTIONS 0.41 (0.016) • HIGH SPEED SATURATED SWITCHING dia. APPLI

 4.3. 2n2894 2n3209.pdf Size:113K _st

2N3209L
2N3209L

Datasheet: 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N2219 , 2N321 , 2N3210 , 2N3211 , 2N3212 , 2N3213 , 2N3214 , 2N3215 , 2N3216 .

 

 
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