2N3209L Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N3209L
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO18
2N3209L Transistor Equivalent Substitute - Cross-Reference Search
2N3209L Datasheet (PDF)
8.1. 2n2894 2n3209.pdf 
Size:113K _st
8.2. 2n3209xcsm.pdf Size:25K _semelab
2N3209XCSM MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) SWITCHING TRANSISTOR FOR HIGH RELIABILITY 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) APPLICATIONS 3 2 1 FEATURES • SILICON PLANAR EPITAXIAL PNP 1.91 ± 0.10 (0.075 ± 0.004) A TRANSISTOR 0.31 rad. (0.012) 3.05 ± 0.13 • HERMETIC CERAMIC SURFACE MOUNT (0.12 ± 0.005) 1.40 (0.055) PA
8.3. 2n3209x.pdf Size:24K _semelab
2N3209X MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) 5.84 (0.230) SWITCHING 5.31 (0.209) TRANSISTOR 4.95 (0.195) 4.52 (0.178) FOR HIGH RELIABILITY APPLICATIONS FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR • SCREENING OPTIONS AVAILABLE 0.48 (0.019) • SPACE QUALITY LEVEL OPTIONS 0.41 (0.016) • HIGH SPEED SATURATED SWITCHING dia. APPLI
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
