All Transistors. BU100A Datasheet

 

BU100A Datasheet and Replacement


   Type Designator: BU100A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO3
 

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BU100A Datasheet (PDF)

 9.1. Size:206K  inchange semiconductor
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BU100A

isc Silicon NPN Power Transistor BU100DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V = 3.3V(Max.)@ I = 8ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output stage of CTVreceivers and high voltage,fast switching a

Datasheet: BT4261 , BT929 , BT929T , BT930 , BT930T , BU100 , BU1008ADF , BU1008AF , TIP35C , BU102 , BU103 , BU103A , BU104 , BU104D , BU104DP , BU104P , BU105 .

History: 2SD193

Keywords - BU100A transistor datasheet

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