BU104 Datasheet, Equivalent, Cross Reference Search
Type Designator: BU104
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
BU104 Transistor Equivalent Substitute - Cross-Reference Search
BU104 Datasheet (PDF)
bu104.pdf
isc Silicon NPN Power Transistor BU104DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = 2.5V(Max.)@ I = 7ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflexion output stage of B/WTV receivers.ABSOLUTE MAXIMUM RATING
bu104d.pdf
isc Silicon NPN Power Transistor BU104DDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = 2.5V(Max.)@ I = 7ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTs.ABSOLUTE MAXIMUM R
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2S132 | NSBC123EPDXV6T1G
History: 2S132 | NSBC123EPDXV6T1G
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