All Transistors. BU104D Datasheet

 

BU104D Datasheet and Replacement


   Type Designator: BU104D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 85 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 7
   Noise Figure, dB: -
   Package: TO3
 

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BU104D Datasheet (PDF)

 ..1. Size:203K  inchange semiconductor
 bu104d.pdf pdf_icon

BU104D

isc Silicon NPN Power Transistor BU104DDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = 2.5V(Max.)@ I = 7ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTs.ABSOLUTE MAXIMUM R

 9.1. Size:207K  inchange semiconductor
 bu104.pdf pdf_icon

BU104D

isc Silicon NPN Power Transistor BU104DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = 2.5V(Max.)@ I = 7ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflexion output stage of B/WTV receivers.ABSOLUTE MAXIMUM RATING

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: CSB1436Q | 2SA1400-Z | RT1N44QS | 2SC494Y | 2SB103 | FJNS4203R | MMT930

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