BU104D Datasheet, Equivalent, Cross Reference Search
Type Designator: BU104D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 7
Noise Figure, dB: -
Package: TO3
BU104D Transistor Equivalent Substitute - Cross-Reference Search
BU104D Datasheet (PDF)
bu104d.pdf
isc Silicon NPN Power Transistor BU104DDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = 2.5V(Max.)@ I = 7ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTs.ABSOLUTE MAXIMUM R
bu104.pdf
isc Silicon NPN Power Transistor BU104DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = 2.5V(Max.)@ I = 7ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflexion output stage of B/WTV receivers.ABSOLUTE MAXIMUM RATING
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
