BU104D Specs and Replacement

Type Designator: BU104D

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 85 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 7

Noise Figure, dB: -

Package: TO3

 BU104D Substitution

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BU104D datasheet

 ..1. Size:203K  inchange semiconductor

 bu104d.pdf pdf_icon

BU104D

isc Silicon NPN Power Transistor BU104D DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO Low Collector Saturation Voltage- V = 2.5V(Max.)@ I = 7A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output stages of TV s and CRT s. ABSOLUTE MAXIMUM R... See More ⇒

 9.1. Size:207K  inchange semiconductor

 bu104.pdf pdf_icon

BU104D

isc Silicon NPN Power Transistor BU104 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO Low Collector Saturation Voltage- V = 2.5V(Max.)@ I = 7A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflexion output stage of B/W TV receivers. ABSOLUTE MAXIMUM RATING... See More ⇒

Detailed specifications: BU100, BU1008ADF, BU1008AF, BU100A, BU102, BU103, BU103A, BU104, TIP35C, BU104DP, BU104P, BU105, BU105-02, BU106, BU107, BU108, BU1085

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