BU104P Specs and Replacement
Type Designator: BU104P
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO220
BU104P Substitution
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BU104P datasheet
isc Silicon NPN Power Transistor BU104 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO Low Collector Saturation Voltage- V = 2.5V(Max.)@ I = 7A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflexion output stage of B/W TV receivers. ABSOLUTE MAXIMUM RATING... See More ⇒
isc Silicon NPN Power Transistor BU104D DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO Low Collector Saturation Voltage- V = 2.5V(Max.)@ I = 7A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output stages of TV s and CRT s. ABSOLUTE MAXIMUM R... See More ⇒
Detailed specifications: BU1008AF, BU100A, BU102, BU103, BU103A, BU104, BU104D, BU104DP, 8050, BU105, BU105-02, BU106, BU107, BU108, BU1085, BU109, BU109D
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