BU105 Specs and Replacement

Type Designator: BU105

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 750 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2.5 A

Max. Operating Junction Temperature (Tj): 115 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 2

Noise Figure, dB: -

Package: TO3

 BU105 Substitution

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BU105 datasheet

 ..1. Size:207K  inchange semiconductor

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BU105

isc Silicon NPN Power Transistor BU105 DESCRIPTION High Voltage-V = 1300V(Min.) CER Collector-Emitter Saturation Voltage- V = 5.0V(Max.)@ I = 2.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line operated B&W(19 and 20 inch 110 deflection circuits ) or color ( 11 and 14 inch 90 deflectio... See More ⇒

Detailed specifications: BU100A, BU102, BU103, BU103A, BU104, BU104D, BU104DP, BU104P, BC558, BU105-02, BU106, BU107, BU108, BU1085, BU109, BU109D, BU109DP

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