All Transistors. BU105 Datasheet

 

BU105 Datasheet and Replacement


   Type Designator: BU105
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 750 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2.5 A
   Max. Operating Junction Temperature (Tj): 115 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 2
   Noise Figure, dB: -
   Package: TO3
 

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BU105 Datasheet (PDF)

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BU105

isc Silicon NPN Power Transistor BU105DESCRIPTIONHigh Voltage-V = 1300V(Min.)CERCollector-Emitter Saturation Voltage-: V = 5.0V(Max.)@ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line operated B&W(19 and 20 inch 110deflection circuits ) or color ( 11 and 14 inch 90 deflectio

Datasheet: BU100A , BU102 , BU103 , BU103A , BU104 , BU104D , BU104DP , BU104P , 9014 , BU105-02 , BU106 , BU107 , BU108 , BU1085 , BU109 , BU109D , BU109DP .

History: 2SD2324 | MMBTSC3356Q

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