All Transistors. BU109 Datasheet

 

BU109 Datasheet and Replacement


   Type Designator: BU109
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 85 W
   Maximum Collector-Base Voltage |Vcb|: 330 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
 

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BU109 Datasheet (PDF)

 ..1. Size:235K  cdil
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BU109

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBU109NPN HIGH VOLTAGE SILICON POWER TRANSISTORTO-3Metal Can PackageHORIZONTAL DEFLECTION OUTPUT STAGE OF TVs and CRTsABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 150 VVCBOCollector Base Voltage 330 VVEBO

 ..2. Size:207K  inchange semiconductor
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BU109

isc Silicon NPN Power Transistor BU109DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= 1.0 V(Max)@ I = 5ACE(sat CCollector-Emitter Sustaining Voltage-: V = 150 V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output stage of TVs andC

Datasheet: BU104DP , BU104P , BU105 , BU105-02 , BU106 , BU107 , BU108 , BU1085 , A1013 , BU109D , BU109DP , BU109NP , BU109P , BU110 , BU111 , BU112 , BU113 .

History: 2SA1186 | 2SB1695K | 2SA1185 | PDTA124TM | 2N3237

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