BU109 Datasheet, Equivalent, Cross Reference Search
Type Designator: BU109
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 330 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
BU109 Transistor Equivalent Substitute - Cross-Reference Search
BU109 Datasheet (PDF)
bu109.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyBU109NPN HIGH VOLTAGE SILICON POWER TRANSISTORTO-3Metal Can PackageHORIZONTAL DEFLECTION OUTPUT STAGE OF TVs and CRTsABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 150 VVCBOCollector Base Voltage 330 VVEBO
bu109.pdf
isc Silicon NPN Power Transistor BU109DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= 1.0 V(Max)@ I = 5ACE(sat CCollector-Emitter Sustaining Voltage-: V = 150 V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output stage of TVs andC
Datasheet: BU104DP , BU104P , BU105 , BU105-02 , BU106 , BU107 , BU108 , BU1085 , BC558 , BU109D , BU109DP , BU109NP , BU109P , BU110 , BU111 , BU112 , BU113 .
