BU123 Specs and Replacement
Type Designator: BU123
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO3
BU123 Substitution
- BJT ⓘ Cross-Reference Search
BU123 datasheet
isc Silicon NPN Power Transistor BU123 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Saturation Voltage- V )= 1.0 V(Max)@ I = 5A CE(sat C Collector-Emitter Sustaining Voltage- V = 120 V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output stage of TVs and C... See More ⇒
Detailed specifications: BU114, BU115, BU116, BU117, BU118, BU120, BU121, BU122, 2SD669A, BU124, BU124A, BU125, BU125S, BU126, BU126A, BU126S, BU126T
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