BU123 Datasheet, Equivalent, Cross Reference Search
Type Designator: BU123
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3
BU123 Transistor Equivalent Substitute - Cross-Reference Search
BU123 Datasheet (PDF)
bu123.pdf
isc Silicon NPN Power Transistor BU123DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Saturation Voltage-: V )= 1.0 V(Max)@ I = 5ACE(sat CCollector-Emitter Sustaining Voltage-: V = 120 V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output stage of TVs andC
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: 2S302