BU124 Specs and Replacement

Type Designator: BU124

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 350 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TOP3

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BU124 datasheet

 ..1. Size:212K  inchange semiconductor

 bu124.pdf pdf_icon

BU124

isc Silicon NPN Power Transistor BU124 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 150V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switch-mode CTV supply systems applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta... See More ⇒

 0.1. Size:211K  inchange semiconductor

 bu124a.pdf pdf_icon

BU124

isc Silicon NPN Power Transistor BU124A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 150V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switch-mode CTV supply systems applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt... See More ⇒

Detailed specifications: BU115, BU116, BU117, BU118, BU120, BU121, BU122, BU123, TIP2955, BU124A, BU125, BU125S, BU126, BU126A, BU126S, BU126T, BU127

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