BU133 Specs and Replacement

Type Designator: BU133

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 750 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

 BU133 Substitution

- BJT ⓘ Cross-Reference Search

 

BU133 datasheet

 ..1. Size:206K  inchange semiconductor

 bu133.pdf pdf_icon

BU133

isc Silicon NPN Power Transistor BU133 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 250V(Min.) CEO(SUS) Collector Saturation Voltage- V = 1.5V(Max.)@ I = 2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in color TV receiver s chopper supply. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒

Detailed specifications: BU126S, BU126T, BU127, BU128, BU129, BU130, BU131, BU132, S9018, BU134, BU135, BU136, BU137, BU137A, BU138, BU139, BU140

Keywords - BU133 pdf specs

 BU133 cross reference

 BU133 equivalent finder

 BU133 pdf lookup

 BU133 substitution

 BU133 replacement