All Transistors. BU1508DX Datasheet

 

BU1508DX Datasheet, Equivalent, Cross Reference Search


   Type Designator: BU1508DX
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 35 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 700 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 80 pF
   Forward Current Transfer Ratio (hFE), MIN: 6
   Noise Figure, dB: -
   Package: SOT186

 BU1508DX Transistor Equivalent Substitute - Cross-Reference Search

   

BU1508DX Datasheet (PDF)

 ..1. Size:51K  philips
bu1508dx.pdf

BU1508DX
BU1508DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1508DX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers. Features exceptional tolerance to base drive an

 ..2. Size:209K  inchange semiconductor
bu1508dx.pdf

BU1508DX
BU1508DX

isc Silicon NPN Power Transistor BU1508DXDESCRIPTIONHigh VoltageHigh Speed SwitchingBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage V =

 7.1. Size:215K  inchange semiconductor
bu1508df.pdf

BU1508DX
BU1508DX

isc Silicon NPN Power Transistor BU1508DFDESCRIPTIONHigh VoltageHigh Speed SwitchingBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage V =

 8.1. Size:59K  philips
bu1508ax.pdf

BU1508DX
BU1508DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1508AX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptionaltolerance to base drive and collector current load variati

 8.2. Size:213K  inchange semiconductor
bu1508af.pdf

BU1508DX
BU1508DX

isc Silicon NPN Power Transistor BU1508AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 8.3. Size:209K  inchange semiconductor
bu1508ax.pdf

BU1508DX
BU1508DX

isc Silicon NPN Power Transistor BU1508AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2S188

 

 
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