All Transistors. BU209A Datasheet

 

BU209A Datasheet and Replacement


   Type Designator: BU209A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 12.5 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 115 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 2.5
   Noise Figure, dB: -
   Package: TO3
 

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BU209A Datasheet (PDF)

 ..1. Size:206K  inchange semiconductor
 bu209a.pdf pdf_icon

BU209A

isc Silicon NPN Power Transistor BU209ADESCRIPTIONHigh Voltage CapabilityHigh Peak PowerHigh Current Capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits in color TVreceivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 9.1. Size:205K  inchange semiconductor
 bu209.pdf pdf_icon

BU209A

isc Silicon NPN Power Transistor BU209DESCRIPTIONHigh Reverse VoltageHigh Peak PowerCollector Current- I = 4ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits in color TVreceivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Vo

Datasheet: BU206A , BU207 , BU207A , BU208 , BU208A , BU208B , BU208D , BU209 , BC548 , BU210 , BU211 , BU212 , BU213 , BU214 , BU215 , BU216 , BU217 .

History: MMT3014 | BC817-16-G | 2SC5332 | NSVMUN5113DW1T3G | NPS4125 | MG200H1AL1 | BC808-40LT1G

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