BU209A Specs and Replacement

Type Designator: BU209A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 12.5 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 800 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 115 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 2.5

Noise Figure, dB: -

Package: TO3

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BU209A datasheet

 ..1. Size:206K  inchange semiconductor

 bu209a.pdf pdf_icon

BU209A

isc Silicon NPN Power Transistor BU209A DESCRIPTION High Voltage Capability High Peak Power High Current Capability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits in color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT... See More ⇒

 9.1. Size:205K  inchange semiconductor

 bu209.pdf pdf_icon

BU209A

isc Silicon NPN Power Transistor BU209 DESCRIPTION High Reverse Voltage High Peak Power Collector Current- I = 4A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits in color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Vo... See More ⇒

Detailed specifications: BU206A, BU207, BU207A, BU208, BU208A, BU208B, BU208D, BU209, 13009, BU210, BU211, BU212, BU213, BU214, BU215, BU216, BU217

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