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2N3219 Specs and Replacement


   Type Designator: 2N3219
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1 MHz
   Collector Capacitance (Cc): 14 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO46

 2N3219 Transistor Equivalent Substitute - Cross-Reference Search

   

2N3219 detailed specifications

 9.1. Size:327K  general electric
 2n319 2n320 2n321.pdf pdf_icon

2N3219

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Detailed specifications: 2N3211 , 2N3212 , 2N3213 , 2N3214 , 2N3215 , 2N3216 , 2N3217 , 2N3218 , 2SC945 , 2N322 , 2N3220 , 2N3221 , 2N3222 , 2N3223 , 2N3224 , 2N3225 , 2N3226 .

History: 2N3209DCSM | 2N3209 | MUN5130DW1T1G

Keywords - 2N3219 transistor specs

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