BU222A Specs and Replacement

Type Designator: BU222A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 525 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 3

Noise Figure, dB: -

Package: TO3

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BU222A datasheet

 ..1. Size:205K  inchange semiconductor

 bu222a.pdf pdf_icon

BU222A

isc Silicon NPN Power Transistor BU222A DESCRIPTION High Collector-Base Breakdown Voltage- V = 525V (Min) (BR)CBO High Current Capability High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒

 9.1. Size:205K  inchange semiconductor

 bu222.pdf pdf_icon

BU222A

isc Silicon NPN Power Transistor BU222 DESCRIPTION High Collector-Base Breakdown Voltage- V = 450V (Min) (BR)CBO High Current Capability High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

Detailed specifications: BU213, BU214, BU215, BU216, BU217, BU218, BU221, BU222, S8550, BU223, BU223A, BU225, BU226, BU2506DF, BU2506DX, BU2507AF, BU2508A

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