All Transistors. BU222A Datasheet

 

BU222A Datasheet and Replacement


   Type Designator: BU222A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 525 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 3
   Noise Figure, dB: -
   Package: TO3
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BU222A Datasheet (PDF)

 ..1. Size:205K  inchange semiconductor
 bu222a.pdf pdf_icon

BU222A

isc Silicon NPN Power Transistor BU222ADESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 525V (Min)(BR)CBOHigh Current CapabilityHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)a

 9.1. Size:205K  inchange semiconductor
 bu222.pdf pdf_icon

BU222A

isc Silicon NPN Power Transistor BU222DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 450V (Min)(BR)CBOHigh Current CapabilityHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)a

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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