2N3221 Specs and Replacement
Type Designator: 2N3221
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO61
2N3221 Substitution
- BJT ⓘ Cross-Reference Search
2N3221 datasheet
isc Silicon NPN Power Transistor 2N3226 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% test Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for power amplifier and switching circuits applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba... See More ⇒
Detailed specifications: 2N3214, 2N3215, 2N3216, 2N3217, 2N3218, 2N3219, 2N322, 2N3220, S9013, 2N3222, 2N3223, 2N3224, 2N3225, 2N3226, 2N3227, 2N3229, 2N323
Keywords - 2N3221 pdf specs
2N3221 cross reference
2N3221 equivalent finder
2N3221 pdf lookup
2N3221 substitution
2N3221 replacement


