BU2525AF Specs and Replacement

Type Designator: BU2525AF

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 45 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 800 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 145 pF

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: SOT199

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BU2525AF datasheet

 ..1. Size:55K  philips

bu2525af 1.pdf pdf_icon

BU2525AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Col... See More ⇒

 ..2. Size:83K  philips

bu2525af.pdf pdf_icon

BU2525AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Col... See More ⇒

 ..3. Size:212K  inchange semiconductor

bu2525af.pdf pdf_icon

BU2525AF

isc Silicon NPN Power Transistor BU2525AF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒

 7.1. Size:57K  philips

bu2525ax 1.pdf pdf_icon

BU2525AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Col... See More ⇒

Detailed specifications: BU2520AX, BU2520D, BU2520DF, BU2520DX, BU2522A, BU2522AF, BU2522AX, BU2525A, A1013, BU2525AX, BU2527A, BU2527AF, BU2527AX, BU284, BU287, BU289, BU306F

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