BU306F Datasheet, Equivalent, Cross Reference Search
Type Designator: BU306F
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TOP66
BU306F Transistor Equivalent Substitute - Cross-Reference Search
BU306F Datasheet (PDF)
..1. Size:214K inchange semiconductor
bu306f bu307f.pdf
bu306f bu307f.pdf
isc Silicon NPN Power Transistor BU306F/307FDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)- BD306FCEO(SUS)400V(Min)- BD307FCollector Current-8AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching regulators, inverters, motorcontrols, solenoid/relay drivers and deflection circuits
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
