All Transistors. BU306F Datasheet

 

BU306F Datasheet and Replacement


   Type Designator: BU306F
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TOP66
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BU306F Datasheet (PDF)

 ..1. Size:214K  inchange semiconductor
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BU306F

isc Silicon NPN Power Transistor BU306F/307FDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)- BD306FCEO(SUS)400V(Min)- BD307FCollector Current-8AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching regulators, inverters, motorcontrols, solenoid/relay drivers and deflection circuits

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2N4955-78 | KSC5025R | HN1B04FE-Y | 2SC482Y | 2SB67 | D60T6050 | RN4989

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