BU306F Specs and Replacement

Type Designator: BU306F

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TOP66

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BU306F datasheet

 ..1. Size:214K  inchange semiconductor

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BU306F

isc Silicon NPN Power Transistor BU306F/307F DESCRIPTION Collector-Emitter Sustaining Voltage- V = 300V(Min)- BD306F CEO(SUS) 400V(Min)- BD307F Collector Current-8A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits... See More ⇒

Detailed specifications: BU2525AF, BU2525AX, BU2527A, BU2527AF, BU2527AX, BU284, BU287, BU289, 2222A, BU307F, BU308, BU310, BU311, BU312, BU322, BU322A, BU323

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