BU307F Datasheet, Equivalent, Cross Reference Search
Type Designator: BU307F
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TOP66
BU307F Transistor Equivalent Substitute - Cross-Reference Search
BU307F Datasheet (PDF)
..1. Size:214K inchange semiconductor
bu306f bu307f.pdf
bu306f bu307f.pdf
isc Silicon NPN Power Transistor BU306F/307FDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)- BD306FCEO(SUS)400V(Min)- BD307FCollector Current-8AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching regulators, inverters, motorcontrols, solenoid/relay drivers and deflection circuits
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
