All Transistors. BU307F Datasheet

 

BU307F Datasheet and Replacement


   Type Designator: BU307F
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TOP66
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BU307F Datasheet (PDF)

 ..1. Size:214K  inchange semiconductor
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BU307F

isc Silicon NPN Power Transistor BU306F/307FDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)- BD306FCEO(SUS)400V(Min)- BD307FCollector Current-8AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching regulators, inverters, motorcontrols, solenoid/relay drivers and deflection circuits

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SA364 | C8050C | 2SD1376 | 3DA150C | ECG95 | BFX92 | R8066

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