All Transistors. BU326A Datasheet

 

BU326A Datasheet, Equivalent, Cross Reference Search


   Type Designator: BU326A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 900 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3

 BU326A Transistor Equivalent Substitute - Cross-Reference Search

   

BU326A Datasheet (PDF)

 ..1. Size:62K  st
bu326a.pdf

BU326A
BU326A

BU326AHIGH VOLTAGE NPN SILICON POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEEDAPPLICATIONS: POWER SUPPLIES LINEAR AND SWITCHING INDUSTRIALEQUIPMENT 1 2DESCRIPTION TO-3The BU326A is a silicon multiepitaxial mesa NPNtransistor in Jedec TO-3 metal case particularlyintended for switch-mode CTV supply system.INTERNAL SCHEMATIC D

 ..2. Size:131K  inchange semiconductor
bu326 bu326a.pdf

BU326A
BU326A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU326 BU326A DESCRIPTION With TO-3 package High voltage;high speed Low collector saturation voltage. APPLICATIONS Intended for operating in CTV receivers chopper supplies. PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 Collector Abs

 ..3. Size:205K  inchange semiconductor
bu326a.pdf

BU326A
BU326A

INCHANGE Semiconductorisc Silicon NPN Power Transistor BU326ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max.) @ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in operating in color TV receivers choppersu

 9.1. Size:208K  inchange semiconductor
bu326s.pdf

BU326A
BU326A

isc Silicon NPN Power Transistor BU326SDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max.) @ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in operating in color TV receivers choppersupplies.ABSOLUTE MAXIMU

 9.2. Size:206K  inchange semiconductor
bu326.pdf

BU326A
BU326A

isc Silicon NPN Power Transistor BU326DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 375V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max.) @ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in operating in color TV receivers choppersupplies.ABSOLUTE MAXIMUM

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
Back to Top