2N3226 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2N3226
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 75 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 0.03 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3

2N3226 Transistor Equivalent Substitute - Cross-Reference Search

2N3226 Datasheet (PDF)

..1. Size:170K inchange semiconductor
2n3226.pdf

isc Silicon NPN Power Transistor 2N3226DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% testMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for power amplifier and switching circuitsapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba

9.1. Size:274K general electric
2n322 2n323 2n324.pdf