2N3227 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N3227
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO18
2N3227 Transistor Equivalent Substitute - Cross-Reference Search
2N3227 Datasheet (PDF)
9.3. Size:170K inchange semiconductor
2n3226.pdf
2n3226.pdf
isc Silicon NPN Power Transistor 2N3226DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% testMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for power amplifier and switching circuitsapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba
Datasheet: 2N322 , 2N3220 , 2N3221 , 2N3222 , 2N3223 , 2N3224 , 2N3225 , 2N3226 , S9013 , 2N3229 , 2N323 , 2N3230 , 2N3231 , 2N3232 , 2N3233 , 2N3234 , 2N3235 .
