2N3227 Specs and Replacement
Type Designator: 2N3227
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO18
2N3227 Substitution
- BJT ⓘ Cross-Reference Search
2N3227 datasheet
isc Silicon NPN Power Transistor 2N3226 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% test Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for power amplifier and switching circuits applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba... See More ⇒
Detailed specifications: 2N322 , 2N3220 , 2N3221 , 2N3222 , 2N3223 , 2N3224 , 2N3225 , 2N3226 , 2222A , 2N3229 , 2N323 , 2N3230 , 2N3231 , 2N3232 , 2N3233 , 2N3234 , 2N3235 .
Keywords - 2N3227 pdf specs
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