BU606D Datasheet, Equivalent, Cross Reference Search
Type Designator: BU606D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
BU606D Transistor Equivalent Substitute - Cross-Reference Search
BU606D Datasheet (PDF)
bu606d.pdf
isc Silicon NPN Power Transistor BU606DDESCRIPTIONFast Switching Speed-: t = 0.75s(Max)fLow Saturation Voltage-: V = 1.0V(Max)@ I = 5ACE(sat) CBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXIMUM RATINGS
bu606.pdf
isc Silicon NPN Power Transistor BU606DESCRIPTIONHigh Voltage: V = 400V(Min)CEVFast Switching Speed-: t = 0.75s(Max)fLow Saturation Voltage-: V = 1.0V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXIM
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
