BU608 Specs and Replacement
Type Designator: BU608
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO3
BU608 Substitution
- BJT ⓘ Cross-Reference Search
BU608 datasheet
isc Silicon NPN Power Transistor BU608 DESCRIPTION High Voltage V = 400V(Min) CEV Fast Switching Speed- t = 0.5 s(Max) f Low Saturation Voltage- V = 1.0V(Max)@ I = 6A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output stages of TV s and CRT s ABSOLUTE MAXIMU... See More ⇒
R BU6084B www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Computer aided power and Switch-mode power supplies 2 2 2 FEATURES 2 Hi... See More ⇒
R BU6084BF www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 1 1 1 APPLICATION 1 Computer aided power and Switch-mode power supplies 2 2 2 FEATURES 2 H... See More ⇒
isc Silicon NPN Power Transistor BU608D DESCRIPTION High Voltage V = 400V(Min) CEV Fast Switching Speed- t = 0.5 s(Max) f Low Saturation Voltage- V = 1.0V(Max)@ I = 6A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output stages of TV s and CRT s ABSOLUTE MAXIM... See More ⇒
Detailed specifications: BU526A-8, BU536, BU546, BU603, BU606, BU606D, BU607, BU607D, S9013, BU608D, BU626, BU626A, BU705, BU705D, BU705DF, BU705F, BU706
Keywords - BU608 pdf specs
BU608 cross reference
BU608 equivalent finder
BU608 pdf lookup
BU608 substitution
BU608 replacement
