All Transistors. BU626 Datasheet

 

BU626 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BU626
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 1000 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 6 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3

 BU626 Transistor Equivalent Substitute - Cross-Reference Search

   

BU626 Datasheet (PDF)

 0.1. Size:206K  inchange semiconductor
 bu626a.pdf

BU626 BU626

isc Silicon NPN Power Transistor BU626ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min.)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 3.3V(Max.) @ I = 8ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power supply units of TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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