BU626 Specs and Replacement
Type Designator: BU626
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 6 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO3
BU626 Substitution
- BJT ⓘ Cross-Reference Search
BU626 datasheet
isc Silicon NPN Power Transistor BU626A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min.) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 3.3V(Max.) @ I = 8A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power supply units of TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ... See More ⇒
Detailed specifications: BU546, BU603, BU606, BU606D, BU607, BU607D, BU608, BU608D, D880, BU626A, BU705, BU705D, BU705DF, BU705F, BU706, BU706D, BU706DF
Keywords - BU626 pdf specs
BU626 cross reference
BU626 equivalent finder
BU626 pdf lookup
BU626 substitution
BU626 replacement
