BU626A Datasheet and Replacement
Type Designator: BU626A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 6 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
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BU626A Datasheet (PDF)
bu626a.pdf

isc Silicon NPN Power Transistor BU626ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min.)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 3.3V(Max.) @ I = 8ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power supply units of TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: DRA4123Y | 2SB1204S | ECG267 | BC635-10 | CMBT3905 | FX5127 | AF101BL
Keywords - BU626A transistor datasheet
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History: DRA4123Y | 2SB1204S | ECG267 | BC635-10 | CMBT3905 | FX5127 | AF101BL



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