BU626A Specs and Replacement

Type Designator: BU626A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 1000 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 6 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

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BU626A datasheet

 ..1. Size:206K  inchange semiconductor

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BU626A

isc Silicon NPN Power Transistor BU626A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min.) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 3.3V(Max.) @ I = 8A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power supply units of TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ... See More ⇒

Detailed specifications: BU603, BU606, BU606D, BU607, BU607D, BU608, BU608D, BU626, 13005, BU705, BU705D, BU705DF, BU705F, BU706, BU706D, BU706DF, BU706F

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