All Transistors. BU800 Datasheet

 

BU800 Datasheet and Replacement


   Type Designator: BU800
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 12 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 700 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 2.2
   Noise Figure, dB: -
   Package: TO3
 

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BU800 Datasheet (PDF)

 ..1. Size:207K  inchange semiconductor
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BU800

isc Silicon NPN Power Transistor BU800DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 5.0V(Max.)@ I = 5.0ACE(sat) CBuilt-in Damper DiodeWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications

Datasheet: BU706 , BU706D , BU706DF , BU706F , BU724 , BU724A , BU724AS , BU726 , 2SA1015 , BU800A , BU800S , BU801 , BU806 , BU806F , BU806FI , BU807 , BU807F .

History: BFP182W | 2SB857B | KRX205U | BC858BMTF | BFP405F

Keywords - BU800 transistor datasheet

 BU800 cross reference
 BU800 equivalent finder
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