BU800 Specs and Replacement
Type Designator: BU800
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 12 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 2.2
Package: TO3
BU800 Substitution
- BJT ⓘ Cross-Reference Search
BU800 datasheet
isc Silicon NPN Power Transistor BU800 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Collector-Emitter Saturation Voltage- V = 5.0V(Max.)@ I = 5.0A CE(sat) C Built-in Damper Diode Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications... See More ⇒
Detailed specifications: BU706, BU706D, BU706DF, BU706F, BU724, BU724A, BU724AS, BU726, BC639, BU800A, BU800S, BU801, BU806, BU806F, BU806FI, BU807, BU807F
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