BU800S Specs and Replacement

Type Designator: BU800S

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 12 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 2.2

Noise Figure, dB: -

Package: TO3

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BU800S datasheet

 9.1. Size:207K  inchange semiconductor

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BU800S

isc Silicon NPN Power Transistor BU800 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Collector-Emitter Saturation Voltage- V = 5.0V(Max.)@ I = 5.0A CE(sat) C Built-in Damper Diode Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications... See More ⇒

Detailed specifications: BU706DF, BU706F, BU724, BU724A, BU724AS, BU726, BU800, BU800A, 2SC2383, BU801, BU806, BU806F, BU806FI, BU807, BU807F, BU807FI, BU808

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