All Transistors. BU800S Datasheet

 

BU800S Datasheet and Replacement


   Type Designator: BU800S
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 12 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 700 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 2.2
   Noise Figure, dB: -
   Package: TO3
 

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BU800S Datasheet (PDF)

 9.1. Size:207K  inchange semiconductor
 bu800.pdf pdf_icon

BU800S

isc Silicon NPN Power Transistor BU800DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOCollector-Emitter Saturation Voltage-: V = 5.0V(Max.)@ I = 5.0ACE(sat) CBuilt-in Damper DiodeWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications

Datasheet: BU706DF , BU706F , BU724 , BU724A , BU724AS , BU726 , BU800 , BU800A , 2SC828 , BU801 , BU806 , BU806F , BU806FI , BU807 , BU807F , BU807FI , BU808 .

History: BUR24 | AC577 | BTA1952E3 | ST8033 | D77GP6 | FF2222 | 2SC89H

Keywords - BU800S transistor datasheet

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