BU908AF Datasheet, Equivalent, Cross Reference Search
Type Designator: BU908AF
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 7 MHz
Collector Capacitance (Cc): 125 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: ISOTOP3
BU908AF Transistor Equivalent Substitute - Cross-Reference Search
BU908AF Datasheet (PDF)
9.2. Size:215K inchange semiconductor
bu908.pdf
bu908.pdf
isc Silicon NPN Power Transistor BU908DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Power Dissipation-: P = 125W@T = 25D CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in color TV horizontal deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
