BU908AF Specs and Replacement

Type Designator: BU908AF

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 7 MHz

Collector Capacitance (Cc): 125 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: ISOTOP3

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BU908AF datasheet

 9.1. Size:235K  cdil

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BU908AF

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 9.2. Size:215K  inchange semiconductor

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BU908AF

isc Silicon NPN Power Transistor BU908 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Power Dissipation- P = 125W@T = 25 D C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in color TV horizontal deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒

Detailed specifications: BU824, BU826, BU826A, BU902, BU902F, BU903, BU903F, BU908, BD139, BU910, BU911, BU912, BU920, BU920P, BU920PFI, BU920T, BU921

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