All Transistors. BU910 Datasheet

 

BU910 Datasheet and Replacement


   Type Designator: BU910
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 350 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220
 

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BU910 Datasheet (PDF)

 ..1. Size:212K  inchange semiconductor
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BU910

isc Silicon NPN Darlington Power Transistor BU910DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for applications such as electronic ignition, DCand AC motor controls, solenoid drivers,etc.ABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: BU826 , BU826A , BU902 , BU902F , BU903 , BU903F , BU908 , BU908AF , 2N3055 , BU911 , BU912 , BU920 , BU920P , BU920PFI , BU920T , BU921 , BU921P .

History: BFAP15 | MP5856 | KT342G

Keywords - BU910 transistor datasheet

 BU910 cross reference
 BU910 equivalent finder
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