BU910 Specs and Replacement

Type Designator: BU910

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO220

 BU910 Substitution

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BU910 datasheet

 ..1. Size:212K  inchange semiconductor

 bu910.pdf pdf_icon

BU910

isc Silicon NPN Darlington Power Transistor BU910 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for applications such as electronic ignition, DC and AC motor controls, solenoid drivers,etc. ABSOLUTE MAXIMUM RATINGS(T =25 ... See More ⇒

Detailed specifications: BU826, BU826A, BU902, BU902F, BU903, BU903F, BU908, BU908AF, 2N3904, BU911, BU912, BU920, BU920P, BU920PFI, BU920T, BU921, BU921P

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