All Transistors. BU912 Datasheet

 

BU912 Datasheet and Replacement


   Type Designator: BU912
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220
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BU912 Datasheet (PDF)

 ..1. Size:211K  inchange semiconductor
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BU912

isc Silicon NPN Darlington Power Transistor BU912DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for applications such as electronic ignition, DCand AC motor controls, solenoid drivers,etc.ABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: NJD2873T4G | FZT560 | ET5065 | AFY29 | CH867UPNGP | GT8000 | CDT1322

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