BU912 Specs and Replacement
Type Designator: BU912
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO220
BU912 Substitution
- BJT ⓘ Cross-Reference Search
BU912 datasheet
isc Silicon NPN Darlington Power Transistor BU912 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for applications such as electronic ignition, DC and AC motor controls, solenoid drivers,etc. ABSOLUTE MAXIMUM RATINGS(T =25 ... See More ⇒
Detailed specifications: BU902, BU902F, BU903, BU903F, BU908, BU908AF, BU910, BU911, 2N5551, BU920, BU920P, BU920PFI, BU920T, BU921, BU921P, BU921PFI, BU921T
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