BU930P Specs and Replacement

Type Designator: BU930P

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 105 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO3

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BU930P datasheet

 9.1. Size:215K  inchange semiconductor

 bu930.pdf pdf_icon

BU930P

isc Silicon NPN Darlington Power Transistor BU930 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min.) CEO(SUS) High Reliability Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒

Detailed specifications: BU921ZT, BU921ZTFI, BU922, BU922P, BU922PFI, BU922T, BU926, BU930, 2N3906, BU930Z, BU930ZP, BU931, BU931P, BU931PFI, BU931R, BU931RP, BU931RPFI

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