2N3240 Datasheet. Specs and Replacement
Type Designator: 2N3240 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 9
Package: TO3
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2N3240 Substitution
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2N3240 datasheet
isc Silicon NPN Power Transistor 2N3240 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general purpose high power switch and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU... See More ⇒
2N3244 Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 40V dia. IC = 1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 ... See More ⇒
Detailed specifications: 2N3233, 2N3234, 2N3235, 2N3236, 2N3237, 2N3238, 2N3239, 2N324, TIP142, 2N3241, 2N3241A, 2N3242, 2N3242A, 2N3244, 2N3244S, 2N3245, 2N3245S
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BJT Parameters and How They Relate
History: MUN2233T1G | CSB1086Q | 2N626 | BUY56-4 | 2N3931 | BDX53F | MUN2115T1G
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