BUD636ASMD Specs and Replacement
Type Designator: BUD636ASMD
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 550 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 11 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO252
BUD636ASMD Substitution
- BJT ⓘ Cross-Reference Search
BUD636ASMD datasheet
NO PDF data!
Detailed specifications: BUD600SMD, BUD616A, BUD616ASMD, BUD620, BUD620SMD, BUD630, BUD630SMD, BUD636A, 2SC2383, BUD700D, BUD700DSMD, BUD86, BUD86SMD, BUD87, BUD87SMD, BUD98, BUD98I
Keywords - BUD636ASMD pdf specs
BUD636ASMD cross reference
BUD636ASMD equivalent finder
BUD636ASMD pdf lookup
BUD636ASMD substitution
BUD636ASMD replacement
