BUF636A Specs and Replacement
Type Designator: BUF636A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 550 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 11 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO220
BUF636A Substitution
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BUF636A datasheet
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Detailed specifications: BUF420AI, BUF420AM, BUF420I, BUF420M, BUF460AV, BUF460V, BUF620, BUF630, 2N5401, BUF640, BUF640A, BUF642, BUF644, BUF646, BUF646A, BUF650, BUF653
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