BUF660 Specs and Replacement
Type Designator: BUF660
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 14 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO220
BUF660 Substitution
- BJT ⓘ Cross-Reference Search
BUF660 datasheet
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Detailed specifications: BUF640A, BUF642, BUF644, BUF646, BUF646A, BUF650, BUF653, BUF654, 13007, BUF672, BUF725D, BUF742, BUF744, BUH100, BUH1015, BUH1215, BUH150
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