BUF744 Specs and Replacement

Type Designator: BUF744

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 550 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO220

 BUF744 Substitution

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BUF744 datasheet

 9.1. Size:216K  inchange semiconductor

 buf742.pdf pdf_icon

BUF744

isc Silicon NPN Power Transistor BUF742 DESCRIPTION Collector Emitter Breakdown Voltage V = 400V(Min.) (BR)CEO Collector Saturation Voltage V = 0.2V(Max) @ I = 0.8A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for electronic lamp ballast circuits switch-mode power supplies applications. ABSOLUTE MAX... See More ⇒

Detailed specifications: BUF646A, BUF650, BUF653, BUF654, BUF660, BUF672, BUF725D, BUF742, BC557, BUH100, BUH1015, BUH1215, BUH150, BUH2M20AP, BUH2M20P, BUH313, BUH313D

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