BUH150 Specs and Replacement

Type Designator: BUH150

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 150 pF

Forward Current Transfer Ratio (hFE), MIN: 4

Noise Figure, dB: -

Package: TO220

 BUH150 Substitution

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BUH150 datasheet

 0.1. Size:462K  motorola

 buh150re.pdf pdf_icon

BUH150

Order this document MOTOROLA by BUH150/D SEMICONDUCTOR TECHNICAL DATA BUH150 Designer's Data Sheet POWER TRANSISTOR 15 AMPERES SWITCHMODE NPN Silicon 700 VOLTS Planar Power Transistor 150 WATTS The BUH150 has an application specific state of art die designed for use in 150 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the l... See More ⇒

 0.2. Size:238K  onsemi

 buh150-d.pdf pdf_icon

BUH150

BUH150G SWITCHMODEt NPN Silicon Planar Power Transistor The BUH150G has an application specific state-of-art die designed for use in 150 Watts Halogen electronic transformers. http //onsemi.com This power transistor is specifically designed to sustain the large inrush current during either the startup conditions or under a short POWER TRANSISTOR circuit across the load. 15 AMPERES 70... See More ⇒

Detailed specifications: BUF660, BUF672, BUF725D, BUF742, BUF744, BUH100, BUH1015, BUH1215, A1941, BUH2M20AP, BUH2M20P, BUH313, BUH313D, BUH315, BUH315D, BUH315DXI, BUH415DXI

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