BUH150 Datasheet and Replacement
Type Designator: BUH150
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 4
Noise Figure, dB: -
Package: TO220
BUH150 Substitution
BUH150 Datasheet (PDF)
buh150re.pdf

Order this documentMOTOROLAby BUH150/DSEMICONDUCTOR TECHNICAL DATABUH150Designer's Data SheetPOWER TRANSISTOR15 AMPERESSWITCHMODE NPN Silicon700 VOLTSPlanar Power Transistor150 WATTSThe BUH150 has an application specific stateofart die designed for use in150 Watts Halogen electronic transformers.This power transistor is specifically designed to sustain the l
buh150-d.pdf

BUH150GSWITCHMODEt NPNSilicon Planar PowerTransistorThe BUH150G has an application specific state-of-art die designedfor use in 150 Watts Halogen electronic transformers. http://onsemi.comThis power transistor is specifically designed to sustain the largeinrush current during either the startup conditions or under a shortPOWER TRANSISTORcircuit across the load.15 AMPERES70
Datasheet: BUF660 , BUF672 , BUF725D , BUF742 , BUF744 , BUH100 , BUH1015 , BUH1215 , BC557 , BUH2M20AP , BUH2M20P , BUH313 , BUH313D , BUH315 , BUH315D , BUH315DXI , BUH415DXI .
History: TSB145 | MP5141 | UNR9218J | 2SB772U-Q | BCP56-16T3 | 2SD1807 | 2SC1981S
Keywords - BUH150 transistor datasheet
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History: TSB145 | MP5141 | UNR9218J | 2SB772U-Q | BCP56-16T3 | 2SD1807 | 2SC1981S



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