BUH2M20AP Datasheet, Equivalent, Cross Reference Search
Type Designator: BUH2M20AP
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 2000 V
Maximum Collector-Emitter Voltage |Vce|: 1200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO220
BUH2M20AP Transistor Equivalent Substitute - Cross-Reference Search
BUH2M20AP Datasheet (PDF)
7.1. Size:67K st
buh2m20.pdf
buh2m20.pdf
BUH2M20APHIGH VOLTAGE NPN SILICONPOWER TRANSISTOR EXTRA HIGH VOLTAGE CAPABILITY LOW OUTPUT CAPACITANCE CHARACTERIZED FOR LINEAR MODEOPERATION.APPLICATIONS: DESIGNED SPECIFICALLY FOR DYNAMICFOCUS IN CTV AND MONITOR. 3DESCRIPTION 21The BUH2M20AP is manufactured usingMultiepitaxial Mesa technology for cost-effectiveTO-220high performance.INTERNAL SCHEMATIC D
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
