All Transistors. BUH2M20AP Datasheet

 

BUH2M20AP Datasheet and Replacement


   Type Designator: BUH2M20AP
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 2000 V
   Maximum Collector-Emitter Voltage |Vce|: 1200 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO220
 

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BUH2M20AP Datasheet (PDF)

 7.1. Size:67K  st
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BUH2M20AP

BUH2M20APHIGH VOLTAGE NPN SILICONPOWER TRANSISTOR EXTRA HIGH VOLTAGE CAPABILITY LOW OUTPUT CAPACITANCE CHARACTERIZED FOR LINEAR MODEOPERATION.APPLICATIONS: DESIGNED SPECIFICALLY FOR DYNAMICFOCUS IN CTV AND MONITOR. 3DESCRIPTION 21The BUH2M20AP is manufactured usingMultiepitaxial Mesa technology for cost-effectiveTO-220high performance.INTERNAL SCHEMATIC D

Datasheet: BUF672 , BUF725D , BUF742 , BUF744 , BUH100 , BUH1015 , BUH1215 , BUH150 , 100DA025D , BUH2M20P , BUH313 , BUH313D , BUH315 , BUH315D , BUH315DXI , BUH415DXI , BUH417 .

History: OC831 | 2SC1030A | BTN1101E3

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