BUH2M20AP Specs and Replacement

Type Designator: BUH2M20AP

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 2000 V

Maximum Collector-Emitter Voltage |Vce|: 1200 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO220

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BUH2M20AP datasheet

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BUH2M20AP

BUH2M20AP HIGH VOLTAGE NPN SILICON POWER TRANSISTOR EXTRA HIGH VOLTAGE CAPABILITY LOW OUTPUT CAPACITANCE CHARACTERIZED FOR LINEAR MODE OPERATION. APPLICATIONS DESIGNED SPECIFICALLY FOR DYNAMIC FOCUS IN CTV AND MONITOR. 3 DESCRIPTION 2 1 The BUH2M20AP is manufactured using Multiepitaxial Mesa technology for cost-effective TO-220 high performance. INTERNAL SCHEMATIC D... See More ⇒

Detailed specifications: BUF672, BUF725D, BUF742, BUF744, BUH100, BUH1015, BUH1215, BUH150, TIP31C, BUH2M20P, BUH313, BUH313D, BUH315, BUH315D, BUH315DXI, BUH415DXI, BUH417

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